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Samsung Develops 30nm 64 Gb Flash Chip

Posted by evoyage on October 24, 2007

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Samsung Electronics Co. said Tuesday it has developed a more advanced flash memory chip that will allow increased data storage in digital products such as music players. Samsung, the world’s largest maker of computer memory chips, unveiled a 64-gigabit NAND flash memory chip based on finer process technology using circuit elements that are 30 nanometers wide.

“The flash memory device represents a major leap forward in the move to higher density flash storage solutions at a time of exploding demand for flash as the main storage medium in computing and digital applications,” says Samsung. Using finer process technology allows more to be fit on a semiconductor chip and reduces power requirements.

To develop the 64Gb NAND chip, Samsung relied on a new manufacturing process it calls self-aligned double patterning technology, or SaDPT for short. SaDPT uses two pattern transfers: one that’s a wide-spaced circuit design, and another that fills in the gaps with a more tightly-spaced pattern. The company believes SaDPT is a “pivotal advancement” that “resolves a critical bottleneck to forming sub-30nm circuitry” and will provide cost-efficiency improvements, since it relies on conventional lithography.

Samsung expects to start producing 30nm, 64Gb flash parts in 2009.


One Response to “Samsung Develops 30nm 64 Gb Flash Chip”

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